View GS816032BGT-200V_4199784.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

gs8160xxbt-xxxv 1m x 18, 512k x 32, 512k x 36 18mb sync burst srams 250 mhz ? 150 mhz 1.8 v or 2.5 v v dd 1.8 v or 2.5 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.03 9/2008 1/22 ? 2004, gsi technology specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. features ? ft pin for user-configurable flow through or pipeline operation ? single cycle deselect (scd) operation ? 1.8 v or 2.5 v core power supply ? 1.8 v or 2.5 v i/o supply ? lbo pin for linear or interleaved burst mode ? internal input resistors on mode pins allow floating mode pins ? default to interleaved pipeline mode ? byte write ( bw ) and/or global write ( gw ) operation ? internal self-timed write cycle ? automatic power-down for portable applications ? jedec-standard 100- lead tqfp package ? rohs-compliant 100-lead tqfp package available functional description applications the gs8160xxbt-xxxv is an 18,874,368-bit (16,777,216-bit for x32 version) high performa nce synchronous sram with a 2-bit burst address counter. al though of a type originally developed for level 2 cache applications supporting high performance cpus, the device now finds application in synchronous sram applications, ranging from dsp main store to networking chip set support. controls addresses, data i/os, chip enables ( e1 , e2, e3 ), address burst control inputs ( adsp , adsc , adv ), and write control inputs ( bx , bw , gw ) are synchronous and are controlled by a positive-edge-triggered clock input (ck). output enable ( g ) and power down control (zz) ar e asynchronous inputs. burst cycles can be initiated with either adsp or adsc inputs. in burst mode, subsequent burst addresses are generated internally and are controlled by adv . the burst address counter may be configured to count in either linear or interleave order with the linear burst order ( lbo ) input. the burst function need not be used . new addresses can be loaded on every cycle with no degradation of chip performance. flow through/pipeline reads the function of the data output register can be controlled by the user via the ft mode pin (pin 14). holding the ft mode pin low places the ram in flow through mode, causing output data to bypass the data output register. holding ft high places the ram in pipeline mode, activating the rising- edge-triggered data output register. byte write and global write byte write operation is performed by using byte write enable ( bw ) input combined with one or more individual byte write signals ( bx ). in addition, global write ( gw ) is available for writing all bytes at one time, regardless of the byte write control inputs. sleep mode low power (sleep mode) is attained through the assertion (high) of the zz signal, or by stopping the clock (ck). memory data is retained during sleep mode. core and interface voltages the gs8160xxbt-xxxv operates on a 1.8 v or 2.5 v power supply. all inputs are 1.8 v or 2.5 v compatible. separate output power (v ddq ) pins are used to decouple output noise from the internal ci rcuits and are 1.8 v or 2.5 v compatible. parameter synopsis -250 -200 -150 unit pipeline 3-1-1-1 t kq tcycle 3.0 4.0 3.0 5.0 3.8 6.7 ns ns curr (x18) curr (x32/x36) 280 330 230 270 185 210 ma ma flow through 2-1-1-1 t kq tcycle 5.5 5.5 6.5 6.5 7.5 7.5 ns ns curr (x18) curr (x32/x36) 210 240 185 205 170 190 ma ma
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 2/22 ? 2004, gsi technology gs816018bt-xxxv 100-p in tqfp pinout note: pins marked with nc can be tied to either v dd or v ss . these pins can also be left floating. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 v ddq v ss dq b dq b v ss v ddq dq b dq b v dd nc v ss dq b dq b v ddq v ss dq b dq b dqp b v ss v ddq v ddq v ss dq a dq a v ss v ddq dq a dq a v ss nc v dd zz dq a dq a v ddq v ss dq a dq a v ss v ddq lbo a a a a a 1 a 0 nc nc v ss v dd a a a a a a a a a a e 1 e 2 nc nc b b b a e 3 ck gw bw v dd v ss g adsc adsp adv a a a 1m x 18 top view dqp a a nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc nc 10099989796959493929190898887868584838281 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 ft
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 3/22 ? 2004, gsi technology gs816032bt-xxxv 100-pin tqfp pinout note: pins marked with nc can be tied to either v dd or v ss . these pins can also be left floating. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 v ddq v ss dq c dq c v ss v ddq dq c dq c v dd nc v ss dq d dq d v ddq v ss dq d dq d dq d v ss v ddq v ddq v ss dq b dq b v ss v ddq dq b dq b v ss nc v dd zz dq a dq a v ddq v ss dq a dq a v ss v ddq lbo a a a a a 1 a 0 nc nc v ss v dd a a a a a a a a a a e 1 e 2 b d b c b b b a e 3 ck gw bw v dd v ss g adsc adsp adv a a a 512k x 32 top view dq b nc dq b dq b dq b dq a dq a dq a dq a nc dq c dq c dq c dq d dq d dq d nc dq c nc 10099989796959493929190898887868584838281 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 ft
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 4/22 ? 2004, gsi technology gs816036bt-xxxv 100-pin tqfp pinout note: pins marked with nc can be tied to either v dd or v ss . these pins can also be left floating. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 v ddq v ss dq c dq c v ss v ddq dq c dq c v dd nc v ss dq d dq d v ddq v ss dq d dq d dq d v ss v ddq v ddq v ss dq b dq b v ss v ddq dq b dq b v ss nc v dd zz dq a dq a v ddq v ss dq a dq a v ss v ddq lbo a a a a a 1 a 0 nc nc v ss v dd a a a a a a a a a a e 1 e 2 b d b c b b b a e 3 ck gw bw v dd v ss g adsc adsp adv a a a 512k x 36 top view dq b dqp b dq b dq b dq b dq a dq a dq a dq a dqp a dq c dq c dq c dq d dq d dq d dqp d dq c dqp c 10099989796959493929190898887868584838281 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 ft
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 5/22 ? 2004, gsi technology tqfp pin description symbol type description a 0 , a 1 i address field lsbs and address counter preset inputs a i address inputs dq a dq b dq c dq d i/o data input and output pins nc no connect bw i byte write ? writes all enabled bytes; active low b a , b b, b c , b d i byte write enable for dq a , dq b data i/os; active low ck i clock input signal; active high gw i global write enable ? writes all bytes; active low e 1 , e 3 i chip enable; active low e 2 i chip enable; active high g i output enable; active low adv i burst address counter advance enable; active low adsp , adsc i address strobe (processor, cache controller); active low zz i sleep mode control; active high ft i flow through or pipeline mode; active low lbo i linear burst order mode; active low v dd i core power supply v ss i i/o and core ground v ddq i output driver power supply
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 6/22 ? 2004, gsi technology gs8160xxb-xxxv block diagram a1 a0 a0 a1 d0 d1 q1 q0 counter load dq dq register register dq register dq register dq register dq register dq register dq register d q register d q register a0 ? an lbo adv ck adsc adsp gw bw e 1 g zz power down control memory array 36 36 4 a qd e 2 e 3 dqx1 ? dqx9 note: only x36 version shown for simplicity. 1 b a b b b c b d ft
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 7/22 ? 2004, gsi technology note: there is a pull-up device on the ft pin and a pull-down device on the zz pi n, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table. burst counter sequences bpr 1999.05.18 mode pin functions mode name pin name state function burst order control lbo l linear burst h interleaved burst output register control ft l flow through h or nc pipeline power down control zz l or nc active h standby, i dd = i sb note: the burst counter wraps to initial state on the 5th clock. note: the burst counter wraps to initial state on the 5th clock. linear burst sequence a[1:0] a[1:0] a[1:0] a[1:0] 1st address 00 01 10 11 2nd address 01 10 11 00 3rd address 10 11 00 01 4th address 11 00 01 10 interleaved burst sequence a[1:0] a[1:0] a[1:0] a[1:0] 1st address 00 01 10 11 2nd address 01 00 11 10 3rd address 10 11 00 01 4th address 11 10 01 00
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 8/22 ? 2004, gsi technology synchronous truth table operation address used state diagram key e 1 e 2 e 3 adsp adsc adv w dq 3 deselect cycle, power down none x l x h x l x x high-z deselect cycle, power down none x l l x x l x x high-z deselect cycle, power down none x l x h l x x x high-z deselect cycle, power down none x l l x l x x x high-z deselect cycle, power down none x h x x x l x x high-z read cycle, begin burst external r l h l l x x x q read cycle, begin burst external r l h l h l x f q write cycle, begin burst external w l h l h l x t d read cycle, continue burst next cr x x x h h l f q read cycle, continue burst next cr h x x x h l f q write cycle, continue burst next cw x x x h h l t d write cycle, continue burst next cw h x x x h l t d read cycle, suspend burst current x x x h h h f q read cycle, suspend burst current h x x x h h f q write cycle, suspend burst current x x x h h h t d write cycle, suspend burst current h x x x h h t d notes: 1. x = don?t care, h = high, l = low 2. e = t (true) if e 2 = 1 and e 1 = e 3 = 0; e = f (false) if e 2 = 0 or e 1 = 1 or e 3 = 1 3. w = t (true) and f (false) is defined in the byte write truth table preceding. 4. g is an asynchronous input. g can be driven high at any time to disable active output drivers. g low can only enable active drivers (shown as ?q? in the truth table above). 5. all input combinations shown above are tested and supported. in put combinations shown in gray boxes need not be used to accom plish basic synchronous or synchronous burst oper ations and may be avoided for simplicity. 6. tying adsp high and adsc low allows simple non-burst synchronous operations. see bold items above. 7. tying adsp high and adv low while using adsc to load new addresses allows simple burst operations. see italic items above.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 9/22 ? 2004, gsi technology simplified state diagram first write first read burst write burst read deselect r w cr cw x x wr r wr x x x simple synchronous operation simple burst synchronous operation cr r cw cr cr notes: 1. the diagram shows only supported (tested) synchr onous state transitions. the diagram presumes g is tied low. 2. the upper portion of the diagram assume s active use of only the enable (e1 , e2, and e3 ) and write (b a , b b , b c , b d , bw , and gw ) control inputs, and that adsp is tied high and adsc is tied low. 3. the upper and lower portions of the diagram together a ssume active use of only the enable, write, and adsc control inputs, and assumes adsp is tied high and adv is tied low.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 10/22 ? 2004, gsi technology simplified state diagram with g first write first read burst write burst read deselect r w cr cw x x wr r w r x x x cr r cw cr cr w cw w cw notes: 1. the diagram shows supported (tes ted) synchronous state transit ions plus supported transitions that depend upon the use of g . 2. use of ?dummy reads ? (read cycles with g high) may be used to make the transition from read cycles to write cycles without passing through a deselect cycle. dummy read cycles increment the address counter just like normal read cycles. 3. transitions shown in gray tone assume g has been pulsed high long enough to turn the ram?s drivers off and for incoming data to meet data input set up time.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 11/22 ? 2004, gsi technology note: permanent damage to the device may occur if the absolute maximum ratings are exceeded. operation should be restricted to recomm ended operating conditions. exposure to conditions exceeding the absolute maximum ra tings, for an extended period of time, may affect reliability of this component. absolute maximum ratings (all voltages reference to v ss ) symbol description value unit v dd voltage on v dd pins ? 0.5 to 4.6 v v ddq voltage on v ddq pins ? 0.5 to v dd v v i/o voltage on i/o pins ? 0.5 to v ddq +0.5 ( 4.6 v max.) v v in voltage on other input pins ? 0.5 to v dd +0.5 ( 4.6 v max.) v i in input current on any pin +/ ? 20 ma i out output current on any i/o pin +/ ? 20 ma p d package power dissipation 1.5 w t stg storage temperature ? 55 to 125 o c t bias temperature under bias ? 55 to 125 o c power supply voltage rang es (1.8 v/2.5 v version) parameter symbol min. typ. max. unit notes 1.8 v supply voltage v dd1 1.7 1.8 2.0 v 2.5 v supply voltage v dd2 2.3 2.5 2.7 v 1.8 v v ddq i/o supply voltage v ddq1 1.7 1.8 v dd v 2.5 v v ddq i/o supply voltage v ddq2 2.3 2.5 v dd v notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 12/22 ? 2004, gsi technology note: these parameters are sample tested. v ddq2 & v ddq1 range logic levels parameter symbol min. typ. max. unit notes v dd input high voltage v ih 0.6*v dd ? v dd + 0.3 v 1 v dd input low voltage v il ? 0.3 ? 0.3*v dd v 1 notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc. recommended operating temperatures parameter symbol min. typ. max. unit notes ambient temperature (com mercial range versions) t a 0 25 70 c 2 ambient temperature (industrial range versions) t a ? 40 25 85 c 2 notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc. capacitance (t a = 25 o c, f = 1 mh z , v dd = 2.5 v) parameter symbol test conditions typ. max. unit input capacitance c in v in = 0 v 8 10 pf input/output capacitance c i/o v out = 0 v 12 14 pf 20% tkc v ss ? 2.0 v 50% v ss v ih undershoot measurement and timing overshoot measure ment and timing 20% tkc v dd + 2.0 v 50% v dd v il
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 13/22 ? 2004, gsi technology ac test conditions parameter conditions figure 1 input high level v dd ? 0.2 v input low level 0.2 v input slew rate 1 v/ns input reference level v dd /2 output reference level v ddq /2 output load fig. 1 notes: 1. include scope and jig capacitance. 2. test conditions as specified with output loading as shown in fig. 1 unless otherwise noted. 3. device is deselected as defined by the truth table. dc electrical characteristics parameter symbol test conditions min max input leakage current (except mode pins) i il v in = 0 to v dd ? 1 ua 1 ua ft , zz input current i in v dd v in 0 v ? 100 ua 100 ua output leakage current i ol output disable, v out = 0 to v dd ? 1 ua 1 ua dc output characteristics (1.8 v/2.5 v version) parameter symbol test conditions min max 1.8 v output high voltage v oh1 i oh = ? 4 ma, v ddq = 1.7 v v ddq ? 0.4 v ? 2.5 v output high voltage v oh2 i oh = ? 8 ma, v ddq = 2.375 v 1.7 v ? 1.8 v output low voltage v ol1 i ol = 4 ma ? 0.4 v 2.5 v output low voltage v ol2 i ol = 8 ma ? 0.4 v dq v ddq/2 50 30pf * output load 1 * distributed test jig capacitance
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 14/22 ? 2004, gsi technology notes: 1. i dd and i ddq apply to any combination of v dd and v ddq operation. 2. all parameters listed are worst case scenario. operating currents parameter test conditions mode symbol -250 -200 -150 unit 0 to 70c ? 40 to 85c 0 to 70c ? 40 to 85c 0 to 70c ? 40 to 85c operating current device selected; all other inputs v ih o r v il output open (x32/ x36) pipeline i dd i ddq 290 40 300 40 240 30 250 30 190 20 200 20 ma flow through i dd i ddq 220 20 230 20 190 15 200 15 175 15 185 15 ma (x18) pipeline i dd i ddq 260 20 270 20 215 15 225 15 170 15 180 15 ma flow through i dd i ddq 200 10 210 10 175 10 185 10 160 10 170 10 ma standby current zz v dd ? 0.2 v ? pipeline i sb 40 50 40 50 40 50 ma flow through i sb 40 50 40 50 40 50 ma deselect current device deselected; all other inputs v ih or v il ? pipeline i dd 85 90 75 80 60 65 ma flow through i dd 60 65 50 55 50 55 ma
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 15/22 ? 2004, gsi technology notes: 1. these parameters are sampled and are not 100% tested. 2. zz is an asynchronous signal. however, in order to be recogniz ed on any given clock cycle, zz mu st meet the specified setup a nd hold times as specified above. ac electrical characteristics parameter symbol -250 -200 -150 unit min max min max min max pipeline clock cycle time tkc 4.0 ? 5.0 ? 6.7 ? ns clock to output valid tkq ? 3.0 ? 3.0 ? 3.8 ns clock to output invalid tkqx 1.5 ? 1.5 ? 1.5 ? ns clock to output in low-z tlz 1 1.5 ? 1.5 ? 1.5 ? ns setup time ts 1.4 ? 1.4 ? 1.5 ? ns hold time th 0.2 ? 0.4 ? 0.5 ? ns flow through clock cycle time tkc 5.5 ? 6.5 ? 7.5 ? ns clock to output valid tkq ? 5.5 ? 6.5 ? 7.5 ns clock to output invalid tkqx 2.0 ? 2.0 ? 2.0 ? ns clock to output in low-z tlz 1 2.0 ? 2.0 ? 2.0 ? ns setup time ts 1.5 ? 1.5 ? 1.5 ? ns hold time th 0.5 ? 0.5 ? 0.5 ? ns clock high time tkh 1.3 ? 1.3 ? 1.5 ? ns clock low time tkl 1.7 ? 1.7 ? 1.7 ? ns clock to output in high-z thz 1 1.5 2.5 1.5 3.0 1.5 3.0 ns g to output valid toe ? 2.5 ? 3.0 ? 3.8 ns g to output in low-z tolz 1 0 ? 0 ? 0 ? ns g to output in high-z tohz 1 ? 2.5 ? 3.0 ? 3.8 ns zz setup time tzzs 2 5 ? 5 ? 5 ? ns zz hold time tzzh 2 1 ? 1 ? 1 ? ns zz recovery tzzr 20 ? 20 ? 20 ? ns
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 16/22 ? 2004, gsi technology pipeline mode timing begin read a cont cont deselect write b read c read c+1 read c+2 read c+3 cont deselect thz tkqx tkq tlz th ts tohz toe th ts th ts th ts th ts th ts ts th ts th ts th ts burst read burst read single write tkc tkc tkl tkl tkh single write single read tkh single read q(a) d(b) q(c) q(c+1) q(c+2) q(c+3) abc deselected with e1 e1 masks adsp e2 and e3 only sampled with adsp and adsc adsc initiated read ck adsp adsc adv a0?an gw bw ba ?bd e1 e2 e3 g dqa?dqd
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 17/22 ? 2004, gsi technology flow through mode timing begin read a cont cont write b read c read c+1 read c+2 read c+3 read c cont deselect thz tkqx tkq tlz th ts tohz toe th ts th ts th ts th ts th ts th ts th ts th ts th ts th ts tkc tkc tkl tkl tkh tkh abc q(a) d(b) q(c) q(c+1) q(c+2) q(c+3) q(c) e2 and e3 only sampled with adsc adsc initiated read deselected with e1 fixed high ck adsp adsc adv a0?an gw bw ba ?bd e1 e2 e3 g dqa?dqd
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 18/22 ? 2004, gsi technology sleep mode during normal operation, zz must be pulled low, either by the us er or by its internal pull down resistor. when zz is pulled hig h, the sram will enter a power sleep mode after 2 cycles. at this time, internal stat e of the sram is preserved. when zz returns t o low, the sram operates normally after zz recovery time. sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to i sb 2. the duration of sleep mode is dictated by the length of time the zz is in a high state. after entering sleep mode, all inputs except zz become disabled and all outputs go to high-z the zz pin is an async hronous, active high input that cau ses the device to enter sleep mo de. when the zz pin is driven high, i sb 2 is guaranteed after the time tzzi is met. because zz is an asynchronous input, pending operations or operations in progress may not be properly completed if zz is asserted. therefore, sleep mode must not be initiat ed until valid pending operations are completed. similarly, when exitin g sleep mode during tzzr, only a deselect or read commands may be applied while the sram is recovering from sleep mode. sleep mode timing application tips single and dual cycle deselect scd devices (like this one) force the use of ?dummy read cycles? (read cycles that ar e launched normally bu t that are ended wit h the output drivers inactive) in a fully sy nchronous environment. dumm y read cycles waste performance but their use usually assures there will be no bus c ontention in transitions from reads to writes or between banks of rams. dcd srams do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care mu st be exercised to avoid excessive bus contention. tzzr tzzh tzzs hold setup tkl tkl tkh tkh tkc tkc ck adsp adsc zz
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 19/22 ? 2004, gsi technology tqfp package drawing (package t) d1 d e1 e pin 1 b e c l l1 a2 a1 y notes: 1. all dimensions are in millimeters (mm). 2. package width and length do not include mold protrusion. symbol description min. nom. max a1 standoff 0.05 0.10 0.15 a2 body thickness 1.35 1.40 1.45 b lead width 0.20 0.30 0.40 c lead thickness 0.09 ? 0.20 d terminal dimension 21.9 22.0 22.1 d1 package body 19.9 20.0 20.1 e terminal dimension 15.9 16.0 16.1 e1 package body 13.9 14.0 14.1 e lead pitch ? 0.65 ? l foot length 0.45 0.60 0.75 l1 lead length ? 1.00 ? y coplanarity 0.10 lead angle 0 ? 7
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 20/22 ? 2004, gsi technology ordering information for gs i synchronous burst rams org part number 1 type voltage option package speed 2 (mhz/ns) t a 3 1m x 18 gs816018bt-250v synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 c 1m x 18 gs816018bt-200v synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 c 1m x 18 gs816018bt-150v synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 c 512k x 32 gs816032bt-250v synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 c 512k x 32 gs816032bt-200v synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 c 512k x 32 gs816032bt-150v synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 c 512k x 36 gs816036bt-250v synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 c 512k x 36 gs816036bt-200v synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 c 512k x 36 gs816036bt-150v synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 c 1m x 18 gs816018bt-250iv synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 i 1m x 18 gs816018bt-200iv synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 i 1m x 18 gs816018bt-150iv synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 i 512k x 32 gs816032bt-250iv synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 i 512k x 32 gs816032bt-200iv synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 i 512k x 32 gs816032bt-150iv synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 i 512k x 36 gs816036bt-250iv synchronous burst 1.8 v or 2.5 v tqfp 250/5.5 i 512k x 36 gs816036bt-200iv synchronous burst 1.8 v or 2.5 v tqfp 200/6.5 i 512k x 36 gs816036bt-150iv synchronous burst 1.8 v or 2.5 v tqfp 150/7.5 i 1m x 18 gs816018bgt-250v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 c 1m x 18 gs816018bgt-200v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 c 1m x 18 gs816018bgt-150v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 c 512k x 32 gs816032bgt-250v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 c 512k x 32 GS816032BGT-200V synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 c 512k x 32 gs816032bgt-150v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 c 512k x 36 gs816036bgt-250v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 c 512k x 36 gs816036bgt-200v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 c 512k x 36 gs816036bgt-150v synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 c 1m x 18 gs816018bgt-250iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 i 1m x 18 gs816018bgt-200iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 i notes: 1. customers requiring delivery in tape and r eel should add the character ?t? to the end of the part number. example: gs816018bt -150ivt. 2. the speed column indicates the cycle frequenc y (mhz) of the device in pipeline mode and the latency (ns) in flow through mod e. each device is pipeline/flow through mode-selectable by the user. 3. t a = c = commercial temperature range. t a = i = industrial temperature range. 4. gsi offers other versions this type of device in many differ ent configurations and with a vari ety of different features, on ly some of which are covered in this data sheet. see the gsi technology web site ( www.gsitechnology.com ) for a complete listing of current offerings.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 21/22 ? 2004, gsi technology 1m x 18 gs816018bgt-150iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 i 512k x 32 gs816032bgt-250iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 i 512k x 32 gs816032bgt-200iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 i 512k x 32 gs816032bgt-150iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 i 512k x 36 gs816036bgt-250iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 250/5.5 i 512k x 36 gs816036bgt-200iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 200/6.5 i 512k x 36 gs816036bgt-150iv synchronous burst 1.8 v or 2.5 v rohs-compliant tqfp 150/7.5 i ordering information for gsi sync hronous burst rams (continued) org part number 1 type voltage option package speed 2 (mhz/ns) t a 3 notes: 1. customers requiring delivery in tape and r eel should add the character ?t? to the end of the part number. example: gs816018bt -150ivt. 2. the speed column indicates the cycle frequenc y (mhz) of the device in pipeline mode and the latency (ns) in flow through mod e. each device is pipeline/flow through mode-selectable by the user. 3. t a = c = commercial temperature range. t a = i = industrial temperature range. 4. gsi offers other versions this type of device in many differ ent configurations and with a vari ety of different features, on ly some of which are covered in this data sheet. see the gsi technology web site (www.gsitechnology.com ) for a complete listing of current offerings.
gs8160xxbt-xxxv specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.03 9/2008 22/22 ? 2004, gsi technology 18mb sync sram datasheet revision history ds/daterev. code: old; new types of changes format or content page;revisions;reason 8160vxxb_r1 ? creation of new datasheet 8160vxxb_r1; 8160xx-xxxv_r1_01 content ? change part numbering due to nomenclature change 8160xx-xxxv_r1_01; 8160xx-xxxv_r1_02 content ? updated truth tables (pg. 7, 8) 8160xx-xxxv_r1_02; 8160xx-xxxv_r1_03 content ? updated for mp status

▲Up To Search▲

Price & Availability of GS816032BGT-200V

	To Download GS816032BGT-200V Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .